The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Apr. 26, 2002
Bernhard Lippmann, Bruckberg, DE;
Stefan Wallstab, München, DE;
Günter Schmid, Hemhofen, DE;
Rainer Leuschner, Nohegan Lake, NY (US);
Bernhard Lippmann, Bruckberg, DE;
Stefan Wallstab, München, DE;
Günter Schmid, Hemhofen, DE;
Rainer Leuschner, Nohegan Lake, NY (US);
Infineon Technologies AG, Munich, DE;
Abstract
An ohmic resistance is present between two parts of a conductor layer so that the size of the ohmic resistance can be ascertained and/or a semiconductor region is present in or on a layer forming the dielectric. The conductor layer is structured into a gate contact, a source contact, and a drain contact so that a transistor function or switching function is possible in the semiconductor region. Such a configuration allows an attempt to analyze the circuit integrated in the chip to be detected.