The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Sep. 16, 2004
Applicants:
Alain Chantre, Seyssins, FR;
Bertrand Martinet, Grenoble, FR;
Michel Marty, Le Meinget, FR;
Pascal Chevalier, Chapareillan, FR;
Inventors:
Alain Chantre, Seyssins, FR;
Bertrand Martinet, Grenoble, FR;
Michel Marty, Le Meinget, FR;
Pascal Chevalier, Chapareillan, FR;
Assignee:
STMicroelectronics S.A., Montrouge, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/70 (2006.01); H01L 31/11 (2006.01);
U.S. Cl.
CPC ...
Abstract
A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.