The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Oct. 15, 2003
Azar Alizadeh, Wilton, NY (US);
Pradeep Sharma, Saratoga Springs, NY (US);
Steven Francis Leboeuf, Schenectady, NY (US);
Suryaprakash Ganti, Guilderland, NY (US);
Mark Philip D'evelyn, Niskayuna, NY (US);
Kenneth Roger Conway, Clifton Park, NY (US);
Peter Micah Sandvik, Guilderland, NY (US);
Loucas Tsakalakos, Niskayuna, NY (US);
Azar Alizadeh, Wilton, NY (US);
Pradeep Sharma, Saratoga Springs, NY (US);
Steven Francis LeBoeuf, Schenectady, NY (US);
Suryaprakash Ganti, Guilderland, NY (US);
Mark Philip D'Evelyn, Niskayuna, NY (US);
Kenneth Roger Conway, Clifton Park, NY (US);
Peter Micah Sandvik, Guilderland, NY (US);
Loucas Tsakalakos, Niskayuna, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
The present invention is directed toward a method for fabricating low-defect nanostructures of wide bandgap materials and to optoelectronic devices, such as light emitting sources and lasers, based on them. The invention utilizes nanolithographically-defined templates to form nanostructures of wide bandgap materials that are energetically unfavorable for dislocation formation. In particular, this invention provides a method for the fabrication of phosphor-less monolithic white light emitting diodes and laser diodes that can be used for general illumination and other applications.