The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
May. 12, 2004
Chen-hsiung Cheng, Westford, MA (US);
Xinbing Liu, Acton, MA (US);
Atsushi Sogami, Hyogo, JP;
Kazuo Nishimura, Fukuoka, JP;
Chen-Hsiung Cheng, Westford, MA (US);
Xinbing Liu, Acton, MA (US);
Atsushi Sogami, Hyogo, JP;
Kazuo Nishimura, Fukuoka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A patterned, multi-layered thin film structure is patterned using ultra-fast lasers and absorption spectroscopy without damaging underlying layers of the layered structure. The structure is made by selecting ablatable layers based on their thermal, strength and absorption spectra and by using an ultra-fast laser programmed with the appropriate wavelength (λ), pulse width (τ), spectral width (Δλ), spot size, bite size and fluence. The end structure may have features (such as vias, insulating areas, or inkjet printed areas) patterned in the last (top) layer applied or at deeper layers within the layered structure, and can be used as components of organic light emitting didoes (OLEDs) and organic thin film transistors (OTFTs). The method of the present invention includes determining the product's specifications, providing a substrate, selecting a layer, applying the layer, patterning the layer and determining if more layers need to be added to the multi-layered thin film structure.