Method for fabricating semiconductor device

Abstract

Disclosed is a method for fabricating a semiconductor device with an improved process margin obtained by preventing damage to an inter-layer insulation layer during a wet cleaning process. Particularly, the method includes the steps of: forming a plurality of a first conductive pattern having a stack pattern of a first conductive and a first hard mask; forming a first inter-layer insulation layer of a good gap-fill property with a height between the first conductive material and the first hard mask on the first conductive layer; forming a second inter-layer insulation layer; forming a second conductive layer contacted the first conductive layer between the plurality of the first conductive patterns as passing through the first and the second inter-layer insulation layers; forming a third inter-layer insulation layer; forming a plurality of second conductive patterns; forming a fourth inter-layer insulation layer; and forming a third conductive layer contacted to the second conductive layer.