The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Dec. 26, 2002
Applicant:
Jung Joo Kim, Kyunggi-do, KR;
Inventor:
Jung Joo Kim, Kyunggi-do, KR;
Assignee:
Dongbu Electronics Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract
A fabrication of a capacitor in a semiconductor is simplified by using nitrogen plasma in forming an aluminum nitride layer functioning as an insulation layer on the aluminum layer disposed in a capacitor region. Subsequently, a planarized IMD (inter-metal dielectric) layer is obtained, facilitating via etching process.
Quick Actions:
Kim, Jung. (2006). Capacitor and fabrication method thereof (U.S. Patent No. 7122419). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7122419
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