The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2006

Filed:

Feb. 09, 2004
Applicants:

Susumu Noda, Uji, JP;

Takashi Asano, Kyoto, JP;

Yoshihiro Akahane, Itami, JP;

Inventors:

Susumu Noda, Uji, JP;

Takashi Asano, Kyoto, JP;

Yoshihiro Akahane, Itami, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

The Q factor and electric field pattern (radiation pattern) for a cavity made from a donor-type point defectas is illustrated in FIG.were simulated by the FDTD method. The simulation parameters were configured by selecting silicon for the slab; and setting approximately 1.55 μm, which is generally used in optical communications, for the wavelength λ; 0.42 μm for the lattice constant a; 0.6a for the slabthickness; and 0.29a for the predetermined sectional radius of the through-holes


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