The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2006

Filed:

Apr. 10, 2002
Applicants:

Katsumichi Ueyanagi, Nagano, JP;

Mutsuo Nishikawa, Nagano, JP;

Katsuyuki Uematsu, Nagano, JP;

Inventors:

Katsumichi Ueyanagi, Nagano, JP;

Mutsuo Nishikawa, Nagano, JP;

Katsuyuki Uematsu, Nagano, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01C 1/012 (2006.01); H01C 7/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a polysilicon resistor that can suppress variations in resistance value in environments with an ambient temperature higher than room temperature. The resistance value Rof a polysilicon contact is reduced to 2% or less of the sum of the resistance value Rof the polysilicon contact and the resistance value Rof a polysilicon resistor. Hence, a semiconductor device that is not significantly affected by a variation in the resistance of the polysilicon contact is realized. This device suppresses variations in resistance value in environments with an ambient temperature higher than room temperature.


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