The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Jul. 10, 2003
Amr Fahim, Solana Beach, CA (US);
Amr Fahim, Solana Beach, CA (US);
QUALCOMM, Incorporated, San Diego, CA (US);
Abstract
An N-FET headswitch has improved performance (e.g., less leakage current, lower ON resistance, and smaller area) over a conventional P-FET headswitch. The N-FET headswitch includes at least one N-FET device and couples between a power supply and a load circuit, which may be, e.g., a microprocessor, a digital signal processor, or a memory unit. The headswitch couples the power supply to the load circuit when the headswitch is enabled and cuts off the power supply from the load circuit when disabled. A charge pump couples to the headswitch and provides a control signal. This control signal is sufficiently high when the headswitch is enabled to ensure that the N-FET device operates in a linear region and has a small drain to source voltage drop. The headswitch may be operated as a power switch or in a feedback configuration to implement a linear or a digital voltage regulator.