The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
May. 15, 2003
Jae-kyu Lee, Daegu-si, KR;
Jae-Kyu Lee, Daegu-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
In a MOS transistor and a method of manufacturing the same, a gate structure including a gate insulating layer and a gate electrode is formed on a semiconductor substrate. A first insulating layer is formed to cover the gate structure. A second insulating layer is formed on the substrate that is spaced apart from the first insulating layer. A lightly doped source/drain region is formed in the surface portions of the substrate between the second insulating layer and the gate structure. A source/drain extension layer are formed on the lightly doped source/drain region. A heavily doped source/drain region is formed on the second insulating layer so as to connect with the source/drain extension layer. The short channel effect is suppressed and the source/drain junction capacitance is reduced.