The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2006

Filed:

Dec. 19, 2003
Applicants:

Yoshihiro Kato, Tokyo, JP;

Katsumi Okayama, Kanagawa, JP;

Kaoru Kobayashi, Chiba, JP;

Tetsuya Yamamoto, Kanagawa, JP;

Minoru Ikarashi, Kanagawa, JP;

Inventors:

Yoshihiro Kato, Tokyo, JP;

Katsumi Okayama, Kanagawa, JP;

Kaoru Kobayashi, Chiba, JP;

Tetsuya Yamamoto, Kanagawa, JP;

Minoru Ikarashi, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device is proposed which enables to guarantee the operation of MRAM elements being magnetically shielded against a large external magnetic fields without being affected by an internal leakage magnetic field. The MRAM elementswhich are shielded by magnetic shield layersare placed at an intermediate regionavoiding an edge regionand a center regionof the magnetic shield layersso that the MRAM element is secured to operate normally without being affected by the internal leakage magnetic field avoiding the edge regionwhere the magnetic shield effect is reduced by the exterior magnetic field, and avoiding the central regionwhere the internal leakage magnetic field is large.


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