The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Sep. 22, 2004
Hans Norström, Solna, SE;
Ted Johansson, Djursholm, SE;
Hans Norström, Solna, SE;
Ted Johansson, Djursholm, SE;
Infineon Technologies AG, Munich, DE;
Abstract
A monolithically integrated circuit comprises a thin film resistor () with low resistance and low temperature coefficient; a high frequency lateral power transistor device () including gate (), source () and drain () regions, and a Faraday shield layer region (') above the gate region; and at least a first metallization layer () there above for electrical connection of the gate (), source () and drain () regions through via holes filled with conductive material (). The thin film resistor () and the Faraday shield layer region (′) are made in the same conductive layer, which is arranged below the first metallization layer ().