The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Apr. 29, 2003
Applicants:
Sang-hyeon Lee, Gyeonggi-do, KR;
Dong-il Bae, Seoul, KR;
Inventors:
Sang-hyeon Lee, Gyeonggi-do, KR;
Dong-il Bae, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/84 (2006.01); H01L 31/62 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract
DRAM cells include a common drain region in an integrated circuit substrate and first and second source regions in the integrated circuit substrate, a respective one of which is laterally offset from the common drain region along respective first and second opposite directions. First and second storage nodes are provided on the integrated circuit substrate, a respective one of which is electrically connected to a respective one of the first and second source regions. The first and second storage nodes are laterally offset from the respective first and second source regions along the first direction.