The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2006

Filed:

Feb. 12, 2004
Applicants:

Il-joo Cho, Seoul, KR;

Eun-chul Park, Taegu, KR;

Songcheol Hong, Taejun, KR;

Euisik Yoon, Taejun, KR;

Inventors:

Il-Joo Cho, Seoul, KR;

Eun-Chul Park, Taegu, KR;

Songcheol Hong, Taejun, KR;

Euisik Yoon, Taejun, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/00 (2006.01); G21K 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A probe is provided for an SPM (Scanning Probe Microscope), and a method is provided for fabricating the probe in which a double side alignment process is not required to simplify the fabricating. The probe includes a cantilever; a body supporting the cantilever; and a tip formed at an end of the cantilever, wherein the cantilever, the body and the tip are made of silicon, and boron is diffused into the cantilever and a predetermined area of the body. The method includes steps of: forming a first mask layer on an area of a silicon substrate to be formed with the body and the tip; etching the silicon substrate in a predetermined depth using the first mask layer to form the tip; removing the first mask and forming a second mask layer on an area of the silicon substrate except for an area to be formed with the body and the cantilever; forming a boron-diffused layer by diffusing boron into an area to be formed with the cantilever and a predetermined area of the body using the second mask; removing the second mask layer and forming a third mask layer on the boron-diffused layer; and etching the silicon substrate using the third mask layer to form the body and the cantilever.


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