The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Jan. 31, 2003
Richard Roland King, Thousand Oaks, CA (US);
Peter C. Colter, Canyon Country, CA (US);
James H. Ermer, Burbank, CA (US);
Moran Haddad, Winnetka, CA (US);
Nasser H. Karam, Northridge, CA (US);
Richard Roland King, Thousand Oaks, CA (US);
Peter C. Colter, Canyon Country, CA (US);
James H. Ermer, Burbank, CA (US);
Moran Haddad, Winnetka, CA (US);
Nasser H. Karam, Northridge, CA (US);
The Boeing Company, Chicago, IL (US);
Abstract
A photovoltaic cell or other optoelectronic device having a wide-bandgap semiconductor used in the window layer. This wider bandgap is achieved by using a semiconductor composition that is not lattice-matched to the cell layer directly beneath it and/or to the growth substrate. The wider bandgap of the window layer increases the transmission of short wavelength light into the emitter and base layers of the photovoltaic cell. This in turn increases the current generation in the photovoltaic cell. Additionally, the wider bandgap of the lattice mismatched window layer inhibits minority carrier injection and recombination in the window layer.