The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
May. 05, 2004
Won-sik Shin, Seoul, KR;
Ki-hyun Hwang, Sungnam-si, KR;
Jung-hwan OH, Suwon-si, KR;
Hyeon-deok Lee, Seoul, KR;
Seok-woo Nam, Yongin-si, KR;
Won-Sik Shin, Seoul, KR;
Ki-Hyun Hwang, Sungnam-si, KR;
Jung-Hwan Oh, Suwon-si, KR;
Hyeon-Deok Lee, Seoul, KR;
Seok-Woo Nam, Yongin-si, KR;
Abstract
In a method of forming an oxide layer, ozone is generated by reacting an oxygen gas having a first flow rate with a nitrogen gas having a second flow rate of more than about 1% of the first flow rate. A reactant including the ozone and nitrogen is provided onto a silicon substrate. A surface of the silicon substrate is oxidized via the reaction of the reactant with silicon in the silicon substrate. The flow rate of the nitrogen gas is increased while ozone serving as an oxidant is formed by reacting the nitrogen gas with the oxygen gas. Thus, the oxide layer or a metal oxide layer including nitrogen may be rapidly formed on the substrate.