The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Nov. 07, 2003
Bum-ki Moon, Tokyo-to, JP;
Bum-Ki Moon, Tokyo-to, JP;
Infineon Technologies AG, Munich, unknown;
Abstract
A ferroelectric capacitor in which damage caused by etching exposed faces of a ferroelectric layer of the capacitor is compensated by depositing a seeding layer of ferroelectric material such as PZT on one or more exposed faces of the ferroelectric layer and depositing an electrode layer made of conductive material such as platinum on the seeding layer. An oxygen annealing recovery process is applied to the device. The seeding layer can transform the phase of the damaged surfaces from amorphous to crystalline during the recovery annealing process and, at the same time, provide the damaged surfaces of the ferroelectric layer with missing element(s), for example lead. The oxygen necessary for recovery of the damage may be obtained through the platinum layer from the oxygen atmosphere.