The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Aug. 24, 2004
Min-suk Lee, Ichon-shi, KR;
Tae-woo Jung, Ichon-shi, KR;
Sung-kwon Lee, Ichon-shi, KR;
Hynix Semiconductor Inc., , KR;
Abstract
A method for fabricating a semiconductor device capable of preventing a hard mask from being lifted and patterns from being defective. Particularly, an inter-layer insulation layer and an etch stop layer formed on a substrate structure provided with conductive structures are first planarized. Then, a hard mask made of a nitride-based material is formed by using a photoresist pattern and an anti-reflective coating layer as an etch mask. After the hard mask formation, the photoresist pattern and the anti-reflective coating layer are removed. Subsequently, a SAC etching process is performed to etch the inter-layer insulation layer with use of the hard mask as an etch mask, thereby obtaining a contact hole exposing the etch stop layer disposed between the conductive structures. The exposed etch stop layer is removed through the use of a blanket etch-back process, and a cleaning process is applied thereafter.