The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2006

Filed:

Aug. 09, 2004
Applicants:

Terry R. Turner, Austin, TX (US);

James D. Spain, Georgetown, TX (US);

Richard M. Banks, Austin, TX (US);

Inventors:

Terry R. Turner, Austin, TX (US);

James D. Spain, Georgetown, TX (US);

Richard M. Banks, Austin, TX (US);

Assignee:

iFire Technologies, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.


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