The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2006

Filed:

Nov. 05, 2003
Applicants:

Kaiping Liu, Plano, TX (US);

Zhiqiang Wu, Plano, TX (US);

Majid Movahed Mansoorz, Plano, TX (US);

Inventors:

Kaiping Liu, Plano, TX (US);

Zhiqiang Wu, Plano, TX (US);

Majid Movahed Mansoorz, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a transistorhaving a germanium implant regionlocated therein, a method of manufacture therefor, and an integrated circuit including the aforementioned transistor. The transistor, in one embodiment, includes a polysilicon gate electrodelocated over a semiconductor substrate, wherein a sidewall of the polysilicon gate electrodehas a germanium implanted regionlocated therein. The transistorfurther includes source/drain regionslocated within the semiconductor substrateproximate the polysilicon gate electrode


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