The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Dec. 29, 2004
Applicants:
Sang Bum Lee, Incheon, KR;
Jin Hyo Jung, Bucheon-si, KR;
Sung Woo Kwon, Anyang-si, KR;
Inventors:
Assignee:
Dongbu Electronics Co., Ltd., Seoul, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A fabricating method of a nonvolatile memory device is disclosed. A disclosed method comprises: implanting ions into an active region of a semiconductor substrate to form a well of a low voltage transistor and adjust its threshold voltage; implanting ions into an active region of the semiconductor substrate to form a well of a high voltage transistor and adjust its threshold voltage, thereby forming a conductive region; depositing an ONO layer on the semiconductor substrate; patterning and etching the ONO layer to form an ONO structure; and forming a gate oxide layer on the semiconductor substrate.