The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Mar. 03, 2005
Tony T. Phan, Flower Mound, TX (US);
Martin B. Mollat, McKinney, TX (US);
Tony T. Phan, Flower Mound, TX (US);
Martin B. Mollat, McKinney, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a method for manufacturing a metal-insulator-metal (MIM) capacitor, a method for manufacturing an integrated circuit having a metal-insulator-metal (MIM) capacitor, and an integrated circuit having a metal-insulator-metal (MIM) capacitor. The method for manufacturing the metal-insulator-metal (MIM) capacitor, among other steps and without limitation, includes providing a material layer () over a substrate (), and forming a refractory metal layer () having a thickness (t) over the substrate (), at least a portion of the refractory metal layer () extending over the material layer (). The method further includes reducing the thickness (t) of the portion of the refractory metal layer () extending over the material layer (), thereby forming a thinned refractory metal layer (), and reacting the thinned refractory metal layer () with at least a portion of the material layer () to form an electrode () for use in a capacitor.