The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Jun. 14, 2002
Chiping Chen, Needham, MA (US);
Michael A. Shapiro, Marblehead, MA (US);
Evgenya I. Smirnova, Somerville, MA (US);
Richard J. Temkin, Newton, MA (US);
Jagadishwar R. Sirigiri, Cambridge, MA (US);
Chiping Chen, Needham, MA (US);
Michael A. Shapiro, Marblehead, MA (US);
Evgenya I. Smirnova, Somerville, MA (US);
Richard J. Temkin, Newton, MA (US);
Jagadishwar R. Sirigiri, Cambridge, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A system and method for designing photonic band gap structures. The system and method provide a user with the capability to produce a model of a two-dimensional array of conductors corresponding to a unit cell. The model involves a linear equation. Boundary conditions representative of conditions at the boundary of the unit cell are applied to a solution of the Helmholtz equation defined for the unit cell. The linear equation can be approximated by a Hermitian matrix. An eigenvalue of the Helmholtz equation is calculated. One computation approach involves calculating finite differences. The model can include a symmetry element, such as a center of inversion, a rotation axis, and a mirror plane. A graphical user interface is provided for the user's convenience. A display is provided to display to a user the calculated eigenvalue, corresponding to a photonic energy level in the Brilloin zone of the unit cell.