The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Aug. 11, 2004
Lawrence C. Gunn, Iii, Encinitas, CA (US);
Roger Koumans, Irvine, CA (US);
Bing LI, San Diego, CA (US);
Guo Liang LI, San Diego, CA (US);
Thierry J. Pinguet, Cardif-by-the-Sea, CA (US);
Lawrence C. Gunn, III, Encinitas, CA (US);
Roger Koumans, Irvine, CA (US);
Bing Li, San Diego, CA (US);
Guo Liang Li, San Diego, CA (US);
Thierry J. Pinguet, Cardif-by-the-Sea, CA (US);
Luxtera, Inc., Carlsbad, CA (US);
Abstract
High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.