The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Sep. 04, 2002
Applicants:
Vladislav Vashchenko, Palo Alto, CA (US);
Ann Concannon, San Jose, CA (US);
Peter J. Hopper, San Jose, CA (US);
Marcel Ter Beek, Pleasanton, CA (US);
Yuri Mirgorodsky, Sunnyvale, CA (US);
Inventors:
Vladislav Vashchenko, Palo Alto, CA (US);
Ann Concannon, San Jose, CA (US);
Peter J. Hopper, San Jose, CA (US);
Marcel ter Beek, Pleasanton, CA (US);
Yuri Mirgorodsky, Sunnyvale, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a triggering ESD protection structure, the triggering voltage is reduced by introducing one or more corners or spikes into the p-n breakdown junction. This may be done by providing a polygate with a zig-zag pattern to define triangular corners in the drain or anode of the structure.