The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Jun. 03, 2005
Fredrick P. Lamaster, Fort Collins, CO (US);
John H. Stanback, Fort Collins, CO (US);
Chintamani P. Palsule, Fort Collins, CO (US);
Thomas E. Dungan, Fort Collins, CO (US);
Fredrick P. LaMaster, Fort Collins, CO (US);
John H. Stanback, Fort Collins, CO (US);
Chintamani P. Palsule, Fort Collins, CO (US);
Thomas E. Dungan, Fort Collins, CO (US);
Avago Technologies Sensor IP Pte. Ltd., Singapore, SG;
Abstract
A pixel including a substrate of a first conductivity type, a photodetector of a second conductivity type that is opposite the first conductivity type and configured to convert incident light to a charge, a floating diffusion of the second conductivity, and a transfer region between the photodetector and floating diffusion. A gate is formed above the transfer region and partially overlaps the photodetector and is configured to transfer charge from the photodetector to the floating diffusion. A pinning layer of the first conductivity type extends at least across the photodetector from the gate. A channel region of the first conductivity type extends generally from a midpoint of the gate at least across the photodiode and is formed by an implant of a dopant of the first conductivity and having a concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than proximate to the floating diffusion.