The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Feb. 11, 2004
Shyh-chiang Shen, Champaign, IL (US);
David Charles Caruth, Champaign, IL (US);
Milton Feng, Champaign, IL (US);
Shyh-Chiang Shen, Champaign, IL (US);
David Charles Caruth, Champaign, IL (US);
Milton Feng, Champaign, IL (US);
Xindium Technologies, Inc., Champaign, IL (US);
Abstract
An indium phosphide based double hetero-junction bipolar transistor with an increased collector-base breakdown voltage and a reduced operational knee voltage is provided by manipulating the conductivity in the collector region. The collector is formed using layers of different conductivities, with a region of the collector relatively close to the base being unintentionally or low doped. A voltage drop across the unintentionally doped region reduces the maximum value of the electric field and the velocity of carriers injected into the collector region at the base-collector junction. The conductivity throughout the collector region may be graded such that the highest conductivity occurs near the sub-collector and lowest conductivity occurs near the base region.