The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Sep. 05, 2002
Hans Von Känel, Wallisellen, CH;
Hans von Känel, Wallisellen, CH;
Eidgenoessische Technische Hochschule Zurich, Zurich, CH;
Abstract
Method for making a semiconductor structures comprising the steps:—forming a virtual substrate on a silicon substrate with a graded SiGelayer and a non-graded SiGelayer, using a high-density, low-energy plasma enhanced chemical vapor deposition (LEPECVD) process with a growth rate above 2 nm/s, a substrate temperature between 400° and 850° C., and a total reactive gas flow at the gas inlet between 5 sccm and 200 sccm;—forming an active region on the virtual substrate that comprises a Ge-channel and at least one modulation-doped layer using a low-density, low-energy plasma enhanced chemical vapor deposition (LEPECVD) process by introducing hydrogen (H) into the growth chamber, maintaining a substrate temperature between 400° and 500° C., and by introducing a dopant gas in a pulsed manner into the growth chamber to provide for the modulation-doped layer.