The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Oct. 04, 2004
Victor M. Torres, Irving, TX (US);
Victor M. Torres, Irving, TX (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A system and method is disclosed for providing a dry-wet-dry etch procedure to create a sidewall profile of a via in a semiconductor device. A first vertical anisotropic dry etch process is applied to etch through a first portion of a dielectric layer. An isotropic wet etch process is then applied to etch a sloping surface in the sidewalls of the via cavity. A second vertical anisotropic dry etch process is then applied to extend the sloping sidewalls of the via cavity down to a substrate of the semiconductor device. The smooth sloping surfaces of the sidewalls are formed without a prior art concave surface of the type that interferes with a via fill process.