The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Dec. 03, 2004
Masakazu Yamaguchi, Kanagawa, JP;
Wataru Saito, Kanagawa, JP;
Ichiro Omura, Kanagawa, JP;
Masaru Izumisawa, Kanagawa, JP;
Masakazu Yamaguchi, Kanagawa, JP;
Wataru Saito, Kanagawa, JP;
Ichiro Omura, Kanagawa, JP;
Masaru Izumisawa, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device in which a trench groove is formed in a first conductivity type semiconductor layer, and a second conductivity type semiconductor layer is epitaxially grown so as to bury the trench groove. The second conductivity type semiconductor layer is then removed until a surface of the first conductivity type semiconductor layer is exposed. The first conductivity type semiconductor layer is epitaxially grown on the first conductivity type semiconductor layer and the second conductivity type semiconductor layer such that the thickness of the first conductivity type semiconductor layer increases by a length which is substantially the same as a depth of the trench groove. The first conductivity type semiconductor layer is selectively removed such that the second conductivity type semiconductor layer is exposed, and the epitaxially growing of the second conductivity type semiconductor layer is repeated through selectively removing the first conductivity type semiconductor layer.