The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Oct. 01, 2004
Christopher F. Lyons, Fremont, CA (US);
Ramkumar Subramanian, Sunnyvale, CA (US);
Sergey D. Lopatin, Santa Clara, CA (US);
James J. Xie, San Jose, CA (US);
Angela T. Hui, Fremont, CA (US);
Christopher F. Lyons, Fremont, CA (US);
Ramkumar Subramanian, Sunnyvale, CA (US);
Sergey D. Lopatin, Santa Clara, CA (US);
James J. Xie, San Jose, CA (US);
Angela T. Hui, Fremont, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Disclosed are methods of making memory cells and semiconductor devices containing the memory cells. The methods involve oxidizing a portion of a copper containing electrode to form a copper oxide layer; contacting the copper oxide layer with at least one of a sulfur containing gas or plasma to form a CuS layer; forming an organic semiconductor over the CuS layer; and forming an electrode over the organic semiconductor. Such devices containing the memory cells are characterized by light weight and robust reliability.