The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2006

Filed:

Jul. 01, 2003
Applicants:

Peter H. Berasi, Hopewell Junction, NY (US);

Michael F. Jerome, Kingston, NY (US);

Doris P. Pulaski, Holmes, NY (US);

Robert P. Rippstein, Hopewell Junction, NY (US);

Inventors:

Peter H. Berasi, Hopewell Junction, NY (US);

Michael F. Jerome, Kingston, NY (US);

Doris P. Pulaski, Holmes, NY (US);

Robert P. Rippstein, Hopewell Junction, NY (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C25F 3/00 (2006.01); G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a method of manufacturing a metal mask for an integrated circuit chip interconnect solder bump. The invention deposits a very thick photoresist on both sides of a very thick molybdenum foil sheet (the molybdenum sheet is at least 8 mils thick and the photoresist is at least 5 microns thick). Then the process exposes and develops the photoresist to produce at least one opening having a diameter of at least 5 mil. The invention simultaneously etches both sides of the molybdenum foil using a very low etchant spray pressure of approximately 5 psi to form at least one via in the molybdenum foil that has a diameter of at least 12 mil and a knife-edge of 0.2 mil. The photoresist is removed after the etching process.


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