The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2006
Filed:
Jul. 14, 2000
Ryuichi Ugajin, Tokyo, JP;
Yoshihiko Kuroki, Kanagawa, JP;
Akira Ishibashi, Tokyo, JP;
Shintaro Hirata, Kanagawa, JP;
Ryuichi Ugajin, Tokyo, JP;
Yoshihiko Kuroki, Kanagawa, JP;
Akira Ishibashi, Tokyo, JP;
Shintaro Hirata, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A fracture structure is grown from a plurality of starting points. A fractal structure, grown from respective starting points and interconnected by interactive growths, forms a neural network. A growth speed originated at a specific starting point is determined by the probability of a material reaching a grown portion from a remote location by means of a diffusion process and the probability of a growth promoting factor reaching a grown portion by means of a diffusion process from a portion grown from a starting point other than the specific one. Anisotropy is introduced into a space in which a fractal structure is to be grown, as required.