The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2006
Filed:
Dec. 27, 2002
Kenji Matsumoto, Kanagawa, JP;
Toshiro Hayakawa, Kanagawa, JP;
Kenji Matsumoto, Kanagawa, JP;
Toshiro Hayakawa, Kanagawa, JP;
Nichia Corporation, Tokushima, JP;
Fuji Photo Film Co., Ltd., Kanagawa, JP;
Abstract
In order to obtain a visually high quality image with excellent sharpness using a silver halide photosensitive material, it is necessary to reduce the ratio of EL light in the light output from a GaN based laser diode to 20% or less. For example, when the light intensity measured on a sheet of photosensitive paper is 0.05 mW, the thickness of a waveguide is 3 nm and the width of the waveguide is 3 μm, this condition is satisfied with a length of a resonator being 1 mm or less. In other words, a waveguide width Wand a resonator length L are set such that the product of the waveguide width Wand the resonator length L (W·L) becomes 0.003 mmor less. This reduces the output ratio of the EL light, and a high quality image with excellent sharpness can be obtained when a silver halide photosensitive material is exposed.