The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2006

Filed:

Sep. 22, 2004
Applicants:

Sanjay Sancheti, Sunnyvale, CA (US);

Jeffery Scott Hunt, Ackerman, MS (US);

George M. Ansel, Starkville, MS (US);

Inventors:

Sanjay Sancheti, Sunnyvale, CA (US);

Jeffery Scott Hunt, Ackerman, MS (US);

George M. Ansel, Starkville, MS (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multi-port memory cell () can be formed from seven transistors. Single ended write operations can be performed without a boosted word line voltage or variable power supply. A data value (D/DB) stored in the memory cell () can be cleared by shorting complementary data nodes (-and-) together. Write data can then be placed on a bit line. Complementary data nodes (-and-) can then be isolated once again, resulting in the write data being latched within the memory cell (). An access method () for a multi-port memory cell is also described.


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