The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2006
Filed:
May. 31, 2002
Alexander Hoefler, Round Rock, TX (US);
Khoi V. Dinh, Austin, TX (US);
Robert A. Jensen, Austin, TX (US);
Matthew B. Rutledge, Austin, TX (US);
Alexander Hoefler, Round Rock, TX (US);
Khoi V. Dinh, Austin, TX (US);
Robert A. Jensen, Austin, TX (US);
Matthew B. Rutledge, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A device for reducing the effects of leakage current within electronic devices is disclosed. In one form, a high voltage driver includes a high voltage source coupled to at least one high voltage transistor and a leakage offset module coupled to at least a portion of one of the high voltage transistors. The leakage offset module includes a diode connected MOS device operable to generate an offset voltage and an MOS shunting device coupled in a parallel with the diode connected MOS device. During operation, the diode connected MOS device generates an offset voltage based on a sub-threshold leakage associated with using the high voltage source and the MOS shorting device is operable to short the diode connected MOS device when sub-threshold leakage current is relatively low.