The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2006

Filed:

May. 06, 2004
Applicants:

Jin-ho Kim, Gyeonggi-do, KR;

Jong-mil Youn, Gyeonggi-do, KR;

Bong-hyun Choi, Gyeonggi-do, KR;

Inventors:

Jin-Ho Kim, Gyeonggi-do, KR;

Jong-Mil Youn, Gyeonggi-do, KR;

Bong-Hyun Choi, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/10 (2006.01); H01L 29/7694 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract

Ternary CAM cells are provided. The ternary CAM cell includes a pair of half cells. Each of the half cells includes an isolation layer formed at a predetermined region of a semiconductor substrate to define a match cell active region. A search gate electrode and a node gate electrode are placed to cross over the match cell active region. A match line is electrically connected to the match cell active region, which is adjacent to the node gate electrode and is located opposite the search gate electrode. An SRAM cell is provided at the semiconductor substrate adjacent to the match cell active region. The node gate electrode is electrically connected to one of a pair of storage nodes of the SRAM cell.


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