The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2006
Filed:
Mar. 27, 2001
Ki-beom Lee, Kuungki-Do, KR;
Mi-sun Park, Kyungki-Do, KR;
Jong-min Kim, Kyungki-Do, KR;
Byung-uk Kim, Kyungki-Do, KR;
Chang-il OH, Kyungki-Do, KR;
Ki-Beom Lee, Kuungki-Do, KR;
Mi-Sun Park, Kyungki-Do, KR;
Jong-Min Kim, Kyungki-Do, KR;
Byung-Uk Kim, Kyungki-Do, KR;
Chang-Il Oh, Kyungki-Do, KR;
Dong Jin Semichem Co., Ltd., Incheon, KR;
Abstract
In a method of controlling a metallic layer etching process for fabricating a semiconductor device or a liquid crystal display device, the composition of the etchant used in etching the metallic layer is first analyzed with the NIR spectrometer. The state of the etchant is then determined by comparing the analyzed composition with the reference composition. In case the life span of the etchant comes to an end, the etchant is replaced with a new etchant. By contrast, in case the life span of the etchant is left over, the etchant is delivered to the next metallic layer etching process. This analysis technique may be applied to the etchant regenerating process in a similar way.