Method of improving residue and thermal characteristics of semiconductor device

Abstract

Disclosed herein is a method of improving residue and thermal characteristics of a semiconductor device. The method comprises the steps of a) depositing nickel and cobalt layers sequentially on a silicone substrate having a transistor formed thereon, b) depositing a capping layer on the cobalt layer, c) forming a silicide layer from the cobalt and nickel layers deposited on the silicone substrate by heat treatment, and d) wet etching to remove a residue. As the silicide layer is formed by additionally deposing the capping layer of titanium nitride on triple layers of silicone, cobalt and nickel, thermal stability for a thermal process performed when forming the silicide is ensured, and as resistance caused by an etchant is eliminated by the subsequent etching process, the residue is completely removed.