The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2006
Filed:
Jun. 28, 2004
Gyu Hyun Kim, Seoul, KR;
Hyo Geun Yoon, Kyoungki-do, KR;
Geun Min Choi, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
Disclosed is a method for forming a capacitor of a semiconductor device. An etch stop layer, first oxide layer and second oxide layer are sequentially deposited on an insulating interlayer of a substrate. Contact holes through which portions of the etch stop layer are exposed above plugs of the insulating interlayer are formed. The contact holes are cleaned by a cleaning solution having an etching selectivity which is higher for the first oxide layer than for the second oxide layer, thereby enlarging lower portions of the contact holes. A spacer nitride layer is formed on surfaces of the contact holes and the second oxide layer. Portions of the spacer nitride layers located on the second oxide layer and above the plugs together with portions of the etch stop layer located on the plugs are removed. A double polysilicon layer is formed on the spacer nitride layer segments.