The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2006

Filed:

Mar. 31, 2004
Applicants:

Kyusik Sin, Pleasanton, CA (US);

Hugh Craig Hiner, Fremont, CA (US);

Xizeng (Stone) Shi, Fremont, CA (US);

William D. Jensen, Fremont, CA (US);

Hua-ching Tong, San Jose, CA (US);

Matthew R Gibbons, Dublin, CA (US);

Roberto Bez, Milan, IT;

Giulio Casagrande, Milan, IT;

Paolo Cappeletti, Milan, IT;

Marco Pasotti, Pavia, IT;

Inventors:

Kyusik Sin, Pleasanton, CA (US);

Hugh Craig Hiner, Fremont, CA (US);

Xizeng (Stone) Shi, Fremont, CA (US);

William D. Jensen, Fremont, CA (US);

Hua-Ching Tong, San Jose, CA (US);

Matthew R Gibbons, Dublin, CA (US);

Roberto Bez, Milan, IT;

Giulio Casagrande, Milan, IT;

Paolo Cappeletti, Milan, IT;

Marco Pasotti, Pavia, IT;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/15 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a method and system for reducing power consumed by a magnetic memory, magnetic memory cells are coupled to a bit line and are associated with a plurality of digit lines. A bit line current is provided in the bit line. Digit currents are provided in parallel in the digit lines at substantially the same time as the bit line current. The digit and bit line currents allow the magnetic memory cells to be written to a plurality of states in parallel.


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