The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2006
Filed:
Mar. 26, 2003
Hidenori Notake, Kyoto, JP;
Teruhito Ohnishi, Osaka, JP;
Akira Asai, Osaka, JP;
Shigetaka Aoki, Osaka, JP;
Hidenori Notake, Kyoto, JP;
Teruhito Ohnishi, Osaka, JP;
Akira Asai, Osaka, JP;
Shigetaka Aoki, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
Immediately after a Si/SiGe film containing a contaminant is formed over all surfaces of a substrate by epitaxial growth, a portion of the Si/SiGe film formed to the back surface side of the substrate is removed by wet etching. In addition, the Si/SiGe film is subjected to processing with heating in a container, after which a dummy run is carried out in the container. These processings prevent secondary wafer contamination through a stage, a robot arm or a vacuum wand for handling a wafer and the contamination of the container also used in the fabrication process of a semiconductor device free from any group IV element but Si.