The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2006
Filed:
Jan. 08, 2004
Tsu-jae King, Fremont, CA (US);
David K. Y. Liu, Fremont, CA (US);
Tsu-Jae King, Fremont, CA (US);
David K. Y. Liu, Fremont, CA (US);
Progressant Technologies, Inc., Mountain View, CA (US);
Abstract
A method of making an n-channel metal-insulator-semiconductor field-effect transistor (MISFET) that uses charge trapping for altering channel conductivity characteristics is disclosed. Other suitable and conventional processing steps are used to finalize completion of the fabrication of the charge trapping device so that the entire process is compatible and achieved with CMOS processing techniques, and so that non-charge trapping devices can be formed at the same time in a common sequence of manufacturing operations.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile