The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2006
Filed:
Feb. 17, 2005
Teruyoshi Takakura, Tenri, JP;
Takeshi Kamikawa, Mihara, JP;
Yoshika Kaneko, Funabashi, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Provided is a method for fabricating a nitride semiconductor light-emitting device including a nitride semiconductor substrate having a groove and a ridge formed on the top surface thereof so as to extend in the shape of stripes and a nitride semiconductor growth layer consisting of a plurality of nitride semiconductor layers laid on top of the nitride semiconductor substrate. The method involves a step of forming a 10 μm or more wide flat region above at least either of the groove and ridge by forming the nitride semiconductor growth layer on top of the nitride semiconductor substrate so that the height of the nitride semiconductor growth layer laid above the groove is smaller than the height of the nitride semiconductor growth layer laid above the ridge.