The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2006

Filed:

May. 18, 2001
Applicants:

Ranaan Y. Zehavi, Sunnyvale, CA (US);

James E. Boyle, Saratoga, CA (US);

Inventors:

Ranaan Y. Zehavi, Sunnyvale, CA (US);

James E. Boyle, Saratoga, CA (US);

Assignee:

Integrated Materials, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 25/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A silicon-based wafer support tower particularly useful for batch-mode thermal chemical vapor deposition. The surfaces of the silicon tower are bead blasted to introduce sub-surface damage, which produces pits and cracks in the surface, which anchor subsequently deposited layer of, for example, silicon nitride, thereby inhibiting peeling of the nitride film. The surface roughness may be in the range of 250 to 2500 μm. Wafer support portions of the tower are preferably composed of virgin polysilicon. The invention can be applied to other silicon parts in a deposition or other substrate processing reactor, such as tubular sleeves and reactor walls. Tubular silicon members are advantageously formed by extrusion from a silicon melt.


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