The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Oct. 14, 2004
Roger W Fleury, Jericho, VT (US);
Jon a Patrick, Jericho, VT (US);
Roger W Fleury, Jericho, VT (US);
Jon A Patrick, Jericho, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of dynamically switching the voltage screen test parameters without falsely rejecting over stressing short channel length devices. Protection to more vulnerable devices is provided by determining the speed of the die prior to the voltage test screen, segregating the devices based on operational speed performance. A lower voltage is effectively applied during wafer probe test to the faster devices, which directly correspond to the population of short channel devices. Device speed is acquired by measuring the drain-to-source current of each FET, and dividing the resultant sum by the device gate channel width. The device with the higher values represent the faster devices. Alternatively, since faster devices draw more current, the supply current specification may be adjusted based on operational speed measurements.