The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Dec. 29, 2003
Hyuk Park, Gyeonggi-do, KR;
Bong Kil Kim, Gyeonggi-do, KR;
Hyuk Park, Gyeonggi-do, KR;
Bong Kil Kim, Gyeonggi-do, KR;
Dongbu Electronics, Co., Ltd., Seoul, KR;
Abstract
Memory cell structures and methods of fabricating the same are disclosed. An illustrated fabrication method comprises: forming spacers to isolate and protect a gate area (including a floating gate and a control gate); forming a gap filling layer over a substrate including the gate area and the spacers; and depositing an insulating layer over the gate area and the gap filling layer. The spacers may be formed of SiN. The gap filling layer may be formed by depositing undoped polysilicon or amorphous silicon over the gate area and the spacers, and by performing an anisotropic etching of the undoped polysilicon or amorphous silicon.