The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Jun. 03, 2004
Applicant:
Ranbir Singh, Gaithersburg, MD (US);
Inventor:
Ranbir Singh, Gaithersburg, MD (US);
Assignee:
Wide bandgap, LLC, South Riding, VA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01);
U.S. Cl.
CPC ...
Abstract
A lateral power diodes with an optimal drift doping formed in widebandgap semiconductors like Silicon Carbide, Aluminum Nitride and Gallium Nitride and Diamond are provided with a voltage rating greater 200V. Contrary to conventional vertical design of power diodes, a higher, optimum doping for a given thickness is critical in supporting higher anode/cathode blocking voltage, and lower on-resistance than vertical drift region designs. The backside contact and the anode junction must be able to support the rated blocking voltage of the device.