The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Aug. 17, 2004
Heather N. Bean, Fort Collins, CO (US);
Mark N. Robins, Greeley, CO (US);
Heather N. Bean, Fort Collins, CO (US);
Mark N. Robins, Greeley, CO (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
A photoelectric imaging sensor and method that provide for electronic shuttering and frequency filtering. An exemplary sensor includes a biased conductive frame disposed adjacent to an electron emitting plate that is coupled by way of a reset field effect transistor to ground. A metallized plate is insulated from (capacitively coupled to) the electron emitting plate and is coupled by way of a charge isolation field effect transistor (to ground. Electronic shuttering and frequency filtering in the photoelectric imaging sensor is implemented is as follows. The conductive frame is biased by predetermined amounts to control the surface work function of the electron emitting plate and set the incident light frequency at which photoelectrons are emitted by the electron emitting plate, thus providing for frequency filtering and electronically shuttering of the photoelectric imaging sensor. Electronic shuttering is provided by gating the metallized plate using the charge isolation field effect transistor.