The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Dec. 10, 2004
Byung-tae Ahn, Daejeon, KR;
Sun-il Kim, Jeonrabuk-do, KR;
Seung-ryul Lee, Seoul, KR;
Jong-ho Park, Seoul, KR;
Byung-Tae Ahn, Daejeon, KR;
Sun-Il Kim, Jeonrabuk-do, KR;
Seung-Ryul Lee, Seoul, KR;
Jong-Ho Park, Seoul, KR;
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Abstract
A method for fabricating epitaxial cobalt disilicide layers uses a cobalt-nitride thin film. Epitaxial cobalt disilicide (CoSi) layers are fabricated using a cobalt-nitride thin film in a salicide process, wherein a silicide is formed on source/drain regions and a polysilicon gate electrode of a nanoscale MOS transistor. Epitaxial CoSilayers can be fabricated on source/drain regions and a gate electrode of a silicon substrate using a cobalt-nitride thin film, without the formation of an interlayer between a cobalt layer and the silicon substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile